Curriculum Vitae
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Lionel Santinacci |
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19.10.1974 |
Nationality: French |
Südliche Stadtmauerstr. 15a |
Tel: + 49 9131 852 7587 |
D-91054 Erlangen |
Fax: + 49 9131 852 7582 |
Germany |
e-mail: lionel@ww.uni-erlangen.de |
Main research interest
Education
1998-2002 |
PhD in Materials Science At Swiss Federal Institute of Technology Lausanne, EPFL (Switzerland) and at the University of Erlangen-Nuremberg (Germany) |
1997-1998 |
Diploma
thesis in Materials Science, University of Marseille-CRMC2-CNRS (France) |
1994-1997 |
M. Sc. in Physical chemistry option Materials Science, University of Marseille (France) |
1993-1994 |
B. Sc. in Physics and Chemistry, University of Toulon (France) |
1991-1992 |
Maturity Certificate in Science, Institute St Mary, Toulon (France) |
Scientific experience
09/1998-07/2002 |
PhD of materials science at Materials Science department of the Swiss Federal Institute of Technology Lausanne (CH) and at the Chair for Surface Science and Corrosion at the University of Erlangen-Nuremberg (D). Subject: "Selective electrochemical reactions onto semi-conductive electrodes." Methods: AFM and STM (observation and nano-scratching), Electrodeposition, capacitance measurements, micro-electrochemistry, Ellipsometry, AES and XPS, SEM and photolithography. |
Collaboration with the Institute of Microstructural Sciences (IMS) of the National Research Council of Canada (NRC-Ottawa) on the growth of anodic oxide films on InP. |
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02/1998-06/1998 |
Diploma thesis in the Research Center for Crystal Growth Mechanisms (CRMC2-CNRS) Marseille (France). Subject: "A quantitative study of metallic cluster morphology by scanning probe microscopies" Methods: scanning probe microscopies (AFM, STM) et ultra-vacuum techniques. |
1996-1997 |
Semester project in the Laboratory for Physical Chemistry of Materials, University of Marseille. Subject : " Effects of additive on electrocristallization of zinc on steel". Training course in industry during 6 weeks at Chemetall Surface Treatment SA in Paris (France). Subject : "Optimization of an industrial bath for Sn and Sn/Pb electroplating |
Teaching experience
01/1999-07/2000 |
Lab. Courses for undergraduate students in Materials Science. -Lithography and fabrication of MOS transistor. -Nano-templates of porous anodic aluminum oxide. |
09/2000-07/2001 |
Lab. Courses for undergraduate students in Materials Science. -Corrosion of materials. |
09-12/2000 |
Tutoring for thermodynamics lecture, undergraduate students. |
01-04/2001 |
Tutoring for electrochemistry lecture, undergraduate students. |
Diploma thesis |
T. Campanella, "Study of the feasibility of Cu nano-systems on Si. H. Mokdad, "AFM induced nano-patterning of Si surfaces". M. Kalloui, "Selective electrodeposition of CdS at semi-conductive electrodes", |
Semester projects |
S. Stauss, "Selective deposition of polyaniline on n-Si" G. Rapillard, "Study of electrochemical deposition of Pd onto Si substrate for micro-systems fabrication" E. Jud, "Pores formation on InP (100) by electrochemical anodization in halogenide electrolytes" S. Ecoffey, "Study of selective electrochemical deposition of Au on silicon substrate" |
Research activities
Main subject |
Nano-patterning by selective electrochemical deposition onto AFM modified silicon surfaces. Methods: AFM (observation, nano-scratching), electrodeposition of metal, polymers et semiconductor, oxide formation (thermal or anodic). |
Other subjects | Pore formation and oxidation of InP. Electron-beam lithography. |
2000 |
"Pore formation on InP and GaAs", 2nd international Conference on Porous Semiconductor Science and Technology, Madrid, march 2000. "Selective electrochemical deposition of metals onto semiconductor surfaces", University of Munich, October 2000. AFM induced nanopatterning of Si surfaces, in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, 198th Meeting of the Electrochem. Soc., Phoenix, October 2000 E-beam induced nano-masking for
metal electrodeposition on semiconductor surfaces, in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, 198th Meeting of the Electrochem. Soc., Phoenix, October 2000. P.
Schmuki, L. Santinacci, T. Djenizian and D.J. Lockwood "Formation and properties of porous InP", in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, 198th Meeting of the Electrochem. Soc., Phoenix, October 2000. "Optical properties of InP", in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, 198th Meeting of the Electrochem. Soc., Phoenix, October 2000. |
2001 |
P. Schmuki, L. Santinacci AFM-induced nanopattening of Si surfaces", German Research Foundation (DFG), "Workshop of the Electrochemical Nanotechnology Program", Pommersfelden, January 2001 "AFM
Induced Nanoscale Electrochemical Deposition of Metals on Si (100)
Surfaces", in Electrochemical Deposition and Dissolution, Joint International
Meeting: 200th ECS meeting and the 52nd ISE meeting, San Francisco, September 2001. "Selective
Pd Electrochemical Deposition on Si (100) Surfaces Assisted by AFM", in Interfacial Structure, Kinetics, and Electrocatalysis, Joint International Meeting: 200th
ECS meeting and the 52nd ISE meeting, San Francisco, September 2001. L. Santinacci, T. Djenizian and P. Schmuki "A novel semiconductor nano-patterning approach using AFM-scratching through thin oxide layers", Joint International meeting: 200th ECS meeting and the 52nd ISE meeting. San Francisco, September 2001
"Electron Beam Induced Carbon Masking for Selective Porous Silicon formation" in 6th International symposium on
the physics and chemistry of luminescent materials Joint
International Meeting: 200th ECS and the 52nd ISE, San Francisco, September 2001. "Electron-Beam Induced Carbon Patterns Used as Mask for the Cadmium Sulfide Deposition on Si(100)" Joint International Meeting: 200th ECS meeting and the 52nd ISE meeting, San Francisco, September 2001 |
2000 |
L. Santinacci, T. Djenizian and P. Schmuki "AFM induced nano-patterning of Si surfaces", in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, P. Schmuki, Editor, PV 2000-25, p. 189, The Electrochemical Society Proceedings Series, Pennington, NJ (2001). T. Djenizian, L. Santinacci and P. Schmuki E-beam induced nano-masking for metal electrodeposition on semiconductor surfaces, in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, P. Schmuki, Editor, PV 2000-25, p. 200, The Electrochemical Society Proceedings Series, Pennington, NJ (2001). P. Schmuki, L. Santinacci, T. Djenizian and D.J. Lockwood "Formation and properties of porous InP", in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, P. Schmuki, Editor, PV 2000-25, p. 554, The Electrochemical Society Proceedings Series, Pennington, NJ (2001). "Optical properties of InP", in 2nd International Symposium on Pits and Pores: Properties and Significance for Advanced Materials, P. Schmuki, Editor, PV 2000-25, p. 567, The Electrochemical Society Proceedings Series, Pennington, NJ (2001). |
2001 |
T. Djenizian, L. Santinacci and P. Schmuki "Electron beam induced carbon masking for selective porous silicon formation", in 6th International symposium on the physics and chemistry of luminescent materials, M. Cahay, Editor, PV 2001, The Electrochemical Society Proceedings Series, Pennington, NJ (2001). |
2000 |
P. Schmuki, L. Santinacci, T. Djenizian and D.J. Lockwood "Pore formation on n-InP", Phys. Stat. Sol. A, 182, 51 (2000). |
2001 |
T. Djenizian, L. Santinacci, P. Schmuki "Localized Electrochemical Deposition of Au into E-beam patterns", J. Electrochem. Soc, 148, 197(2001). |
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T. Djenizian, L. Santinacci, P. Schmuki "Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces", Appl. Phys. Lett, 78, 2940 (2001). |
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L. Santinacci, T. Djenizian and P. Schmuki "AFM induced nano-patterning of Si surfaces", J. Electrochem. Soc., 148, 640 (2001). |
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L. Santinacci, T. Djenizian and P. Schmuki "Nanoscale patterning of Si(100) surfaces by scratching through the native oxide layer using atomic force microscope", Appl. Phys Lett., 79, 1882(2001). |
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T. Djenizian, B. Petite, L. Santinacci and P. Schmuki "Electron-beam induced carbon deposition used as mask for cadmium sulfide deposition", Electrochim. Acta, (2001), in press. |
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T. Djenizian, G. I. Sproule, S. Meisa, D. Landheer, X. Wu, L. Santinacci, P. Schmuki and M. Graham "Composition and growth of thin anodic oxides formed on InP (100)" ,Electrochim. Acta, submitted. |
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L. Santinacci, T. Djenizian, S. Ecoffey, H. Mokdad, T. Campanella and P. Schmuki "Selective Palladium electrochemical deposition on Si (100) assisted by AFM oxide scratching, Electrochim. Acta, submitted |
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T. Djenizian, L. Santinacci and P.Schmuki "E-beam induced carbon deposition used as negative resist for selective porous Si formation", J. Electrochem. Soc., submitted |
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T. Djenizian, L. Santinacci and P.Schmuki "E-beam induced mask effect for electrochemical reaction, nanostructures fabrication", Electrochim. Acta, submitted |
Publications of more general nature
2001 |
Report form the on-line scientific journal: Insight R&D alert about sub-100-nm technology for device fabrication T.
Djenizian, L. Santinacci and P.Schmuki, Sub-100-nm mask is repairable , Frost & Sullivan, New-York, June 8th 2001 |
Languages
French (mother tongue). English and Italian (reading and writing) and basic knowledge of German.